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Same model may have multiple batches, images only for reference.
SIHB24N65ET5-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB24N65ET5-GE3

Part No SIHB24N65ET5-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB24N65ET5-GE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2740 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB24
Standard Package 800
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277763-SIHB24N65ET5-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB24N65ET5-GE3 CAD Model

Description

The Vishay Siliconix SIHB24N65ET5-GE3 is an N-Channel MOSFET with a maximum power dissipation of 250W (Tc).

  • Category: Discrete semiconductor product, Transistors - FETs, MOSFETs - Single
  • Drain-Source Voltage: 650V
  • Continuous Drain Current: 24A (Tc)
  • Maximum Rds On: 145mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V

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