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SIHA17N80E-E3

Part No SIHA17N80E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2408 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA17
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277717-SIHA17N80E-E3
Ultra Librarian 3D Model Ultra Librarian SIHA17N80E-E3 CAD Model

Description

The Vishay Siliconix SIHA17N80E-E3 MOSFET is an N-channel, metal oxide transistor with a drain to source voltage of 800V and a continuous drain current of 15A at 25°C.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum On-Resistance: 290mOhm @ 8.5A, 10V
  • Gate Charge: 122nC @ 10V
  • Input Capacitance: 2408pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Power Dissipation: 35W @ 25°C
  • Mounting Type: Through Hole
  • Package: TO-220-3 full pack
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $4.0097 $60.1455
36+ $3.2901 $118.4436
55+ $3.1873 $175.3015
75+ $3.0845 $231.3375
97+ $2.9817 $289.2249
130+ $2.6731 $347.5030
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Availability: 20 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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