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SIHB12N65E-GE3

Part No SIHB12N65E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB12
Other Names SIHB12N65E-GE3TR,SIHB12N65E-GE3TRINACTIVE,SIHB12N65E-GE3DKR,SIHB12N65E-GE3DKR,SIHB12N65E-GE3DKRINACTIVE,SIHB12N65E-GE3CT,SIHB12N65E-GE3TR,SIHB12N65E-GE3CT
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277861-SIHB12N65E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB12N65E-GE3 CAD Model

Description

The Vishay Siliconix SIHB12N65E-GE3 is an N-channel MOSFET transistor with a drain-source voltage of 650V and a continuous drain current of 12A @ 25°C.

  • Maximum Power Dissipation: 156W (Tc)
  • Maximum Rds On @ Id, Vgs: 380mOhm @ 6A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 70 nC @ 10V
  • Maximum Input Capacitance: 1224 pF @ 100V
  • Maximum Vgs: ±30V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7080 $51.9120
33+ $3.0424 $100.3992
51+ $2.9474 $150.3174
71+ $2.8523 $202.5133
91+ $2.7572 $250.9052
122+ $2.4720 $301.5840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 500 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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