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Same model may have multiple batches, images only for reference.
SIHB22N60EL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB22N60EL-GE3

Part No SIHB22N60EL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB22N60EL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 197mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1690 pF @ 100 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB22
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277907-SIHB22N60EL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB22N60EL-GE3 CAD Model

Description

The SIHB22N60EL-GE3 is a N-Channel MOSFET transistor designed for high power applications.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 21A @ 25°C
  • Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD (SMT) technology
  • Power Dissipation (Max): 227W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Ideal for: Use in a wide range of applications.

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