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SIHB22N65E-GE3

Name: SIHB22N65E-GE3
Brand: Vishay
SKU: 1277863
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHB22N65E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHB22N65E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2415 pF @ 100 V
Power Dissipation (Max)	227W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	SIHB22
Other Names	SIHB22N65E-GE3CT,SIHB22N65E-GE3TR,SIHB22N65E-GE3TRINACTIVE,SIHB22N65E-GE3CT,SIHB22N65E-GE3TR
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277863-SIHB22N65E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHB22N65E-GE3 CAD Model

Alternative Products

Description

The SIHB22N65E-GE3 from Vishay Siliconix is an N-channel MOSFET transistor, designed for use in discrete semiconductor products like transistors and FETs.

Drain to Source Voltage: 650 V
Continuous Drain Current: 22A @ 25°C
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 227W (Tc)
Temperature Range: -55°C ~ 150°C (TJ)
ECCN: EAR99

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