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Same model may have multiple batches, images only for reference.
SIHB6N65E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB6N65E-GE3

Part No SIHB6N65E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB6N65E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB6
Other Names SIHB6N65E-GE3CT,SIHB6N65E-GE3TR,SIHB6N65E-GE3CT,SIHB6N65E-GE3TR,SIHB6N65E-GE3TRINACTIVE
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277866-SIHB6N65E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB6N65E-GE3 CAD Model

Description

The Vishay Siliconix SIHB6N65E-GE3 is an N-channel MOSFET that can handle a continuous drain current of 7A @ 25°C.

  • Drain-Source Voltage: 650V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 600mOhm @ 3A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 48nC @ 10V
  • Mounting Style: SMD
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 78W @ Tc
  • Temperature Range: -55°C to 150°C (TJ)

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