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Same model may have multiple batches, images only for reference.
SIHD14N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD14N60E-GE3

Part No SIHD14N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHD14N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1205 pF @ 100 V
Power Dissipation (Max) 147W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD14
Standard Package 75
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277744-SIHD14N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD14N60E-GE3 CAD Model

Description

This N-channel MOSFET transistor is a discrete semiconductor product used for electronic devices.

  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id): 13A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 309mOhm @ 7A, 10V
  • Maximum Gate-Source Threshold Voltage (Vgs(th)) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
  • Maximum Vgs: ±30V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation (Max): 147W (Tc)
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)

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