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SIHD1K4N60E-GE3

Name: SIHD1K4N60E-GE3
Brand: Vishay
SKU: 1277779
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHD1K4N60E-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHD1K4N60E-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	172 pF @ 100 V
Power Dissipation (Max)	63W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	SIHD1
Other Names	SIHD1K4N60E-GE3DKR,SIHD1K4N60E-GE3DKR,SIHD1K4N60E-GE3TR,SIHD1K4N60E-GE3DKRINACTIVE,SIHD1K4N60E-GE3CT,SIHD1K4N60E-GE3CT,SIHD1K4N60E-GE3TR,SIHD1K4N60E-GE3CTINACTIVE
Standard Package	2,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277779-SIHD1K4N60E-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHD1K4N60E-GE3 CAD Model

Alternative Products

Description

The SIHD1K4N60E-GE3 is an N-Channel MOSFET transistor that belongs to the E series of discrete semiconductor products.

Drain to Source Voltage (Vdss): up to 600 V
Continuous Drain Current (Id): 4.2A @ 25°C
Maximum On-State Resistance (Rds On): 1.45Ohm @ 500mA and 10V
Gate-Source Threshold Voltage (Vgs(th)): 5V @ 250μA
Maximum Power Dissipation: 63W @ Tc
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 package
Gate Charge (Qg): 7.5 nC @ 10 V
Input Capacitance (Ciss): 172 pF @ 100 Vds
Maximum Gate-Source Voltage (Vgs): ±30V
Operating Temperature Range: -55°C to 150°C (TJ)
Manufacturer: Vishay Siliconix

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