The Vishay Siliconix SIHD240N60E-GE3 is a MOSFET (Metal Oxide) technology product with an N-channel FET type.

• Drain to Source Voltage (Vdss): 600 V
• Current-Continuous Drain (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Power Dissipation (Max): 78W (Tc)
• Case/Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
• Vgs (Max): ±30V
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• Category: Discrete semiconductor products
• Status: Active
• MSL Level: 1 (unlimited)
• HTSUS: 8541.29.0095