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SIHD2N80AE-GE3

Part No SIHD2N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 100 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD2
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277721-SIHD2N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD2N80AE-GE3 CAD Model

Description

This electronic component is a MOSFET transistor from the E series with a Win Source Part Number of 1277721-SIHD2N80AE-GE3.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 2.9A @ 25°C
  • Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
  • Temperature Range for Operating: -55°C ~ 150°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Manufacturer: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,678 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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