The Vishay Siliconix SIHD2N80E-GE3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 800V and continuous drain current (Id) of 2.8A (Tc) @ 25°C.

• Manufacturer: Vishay Siliconix
• Part Number: SIHD2N80E-GE3
• Type: N-channel MOSFET
• Drain to Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 2.8A (Tc) @ 25°C
• Rds On (Max) @ 1A, 10V: 2.75Ohm
• Vgs(th) (Max) @ 250µA: 4V
• Mounting Technology: SMD (SMT)
• Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Power Dissipation: 62.5W (Tc)
• Gate Charge (Qg) (Max) @ 10 V: 19.6 nC
• Input Capacitance (Ciss) (Max) @ 100 V: 315 pF
• Vgs (Max): ±30V
• Operating Temperature: -55°C ~ 150°C (TJ)