The SIHD3N50DT4-GE3 is a discrete semiconductor product that is a transistor with FETs, MOSFETs - Single.

• Series: D series
• Win Source Part Number: 1277780
• Mounting Technology: SMD (SMT)
• Technology: MOSFET (Metal Oxide)
• FET Type: N-channel
• Drain to Source Voltage (Vdss): 500 V
• Current for Continuous Drain (Id) @ 25°C: 3A (Tc)
• Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250μA
• Power Dissipation (Max): 69W (Tc)
• Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
• Vgs (Max): ±30V
• Temperature Range: -55°C to 150°C (TJ)
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095
• Manufacturer: Vishay Siliconix
• Base Product Number: SIHD3
• Drive Voltage: 10V