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Same model may have multiple batches, images only for reference.
SIHD3N50DT5-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHD3N50DT5-GE3

Part No SIHD3N50DT5-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHD3N50DT5-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V
Power Dissipation (Max) 69W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHD3
Other Names 742-SIHD3N50DT5-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277911-SIHD3N50DT5-GE3
Ultra Librarian 3D Model Ultra Librarian SIHD3N50DT5-GE3 CAD Model

Description

The Vishay Siliconix SIHD3N50DT5-GE3 is an N-channel MOSFET transistor that is packaged in a tape and reel format.

  • Power Dissipation: Maximum of 69W
  • Supply and Demand Status: Unlimited
  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 3A

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5379 $59.1690
265+ $0.4414 $116.9710
410+ $0.4276 $175.3160
560+ $0.4139 $231.7840
725+ $0.4000 $290.0000
970+ $0.3587 $347.9390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,690 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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