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Same model may have multiple batches, images only for reference.
SIHF065N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF065N60E-GE3

Part No SIHF065N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 40A TO220 / N-Channel 600 V 40A (Tc) 39W (Tc) Through Hole TO-220 Full Pack
Datasheet
SIHF065N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 100 V
Power Dissipation (Max) 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF065
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1010026-SIHF065N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF065N60E-GE3 CAD Model

Description

This electronic component is a discrete semiconductor product with a Win Source Part Number of 1010026-SIHF065N60E-GE3.

  • Series: E series
  • Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
  • Type: N-channel MOSFET (Metal Oxide)
  • Vdss: 600 V
  • Id @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Power Dissipation (Max): 39W (Tc)
  • Mounting: Through Hole
  • Package: TO-220-3 Full Pack

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Quantity Unit Price Ext. Price
10+ $6.2905 $62.9050
23+ $5.1615 $118.7145
35+ $5.0002 $175.0070
48+ $4.8389 $232.2672
62+ $4.6777 $290.0174
83+ $4.1937 $348.0771
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