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Same model may have multiple batches, images only for reference.
SIHF12N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHF12N60E-E3

Part No SIHF12N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220 FULLP
Datasheet
SIHF12N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 937pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 028744-SIHF12N60E-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIHF12N60E-E3 CAD Model

Description

The 028744-SIHF12N60E-E3 is an N-Channel MOSFET from Vishay.

  • Supply and Demand Status: sufficient
  • Case/Package: TO-220 Full Pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Tc): 12A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 380 mOhm @ 6A, 10V
  • Maximum Gate Charge: 58nC @ 10V
  • Maximum Input Capacitance: 937pF @ 100V
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4172 $51.2580
36+ $2.8039 $100.9404
56+ $2.7163 $152.1128
77+ $2.6287 $202.4099
99+ $2.5410 $251.5590
132+ $2.2782 $300.7224
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Availability: 3,830 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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