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Same model may have multiple batches, images only for reference.
SIHF22N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF22N60E-GE3

Part No SIHF22N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220
Datasheet
SIHF22N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1920pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096423-SIHF22N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHF22N60E-GE3 CAD Model

Description

The Vishay 1096423-SIHF22N60E-GE3 is an N-channel MOSFET that is available in a TO-220 Full Pack case/package.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 21A
  • Maximum Rds On @ Id,Vgs: 180 mOhm @ 11A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 86nC @ 10V
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
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31+ $3.3166 $102.8146
47+ $3.2129 $151.0063
65+ $3.1093 $202.1045
84+ $3.0057 $252.4788
112+ $2.6947 $301.8064
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Availability: 373 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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