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Same model may have multiple batches, images only for reference.
SIHF22N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHF22N60E-GE3

Part No SIHF22N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO220
Datasheet
SIHF22N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1920pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096423-SIHF22N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number SPA20N60C3;  SiHF22N60E-E3;  SIHA22N60E-E3;  

Description

The Vishay 1096423-SIHF22N60E-GE3 is an N-channel MOSFET that is available in a TO-220 Full Pack case/package. It has a maximum drain-source breakdown voltage of 600V and a continuous drain current of 21A at 25°C. The maximum Rds On at Id,Vgs is 180 mOhm at 11A, 10V. The maximum gate-source voltage of this component is ±30V and the maximum gate charge is 86nC at 10V. The supply and demand status of this component is balanced.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
13+ $3.9819 $51.7647
27+ $3.7251 $100.5777
42+ $3.5966 $151.0572
60+ $3.3397 $200.3820
78+ $3.2113 $250.4814
98+ $3.0828 $302.1144
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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