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SIHF6N40D-E3

Part No SIHF6N40D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 6A TO220  /  N-Channel 400 V 6A (Tc) 30W (Tc) Through Hole TO-220 Full Pack
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 311 pF @ 100 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHF6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SIHF6N40DE3
Standard Package 1,000
Win Source Part Number 1225050-SIHF6N40D-E3
Ultra Librarian 3D Model Ultra Librarian SIHF6N40D-E3 CAD Model

Description

The SIHF6N40D-E3 electronic component is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix.

  • Maximum Drain-to-Source Voltage: 400V
  • Continuous Drain Current: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Power Dissipation (Max): 30W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220-3 Full Pack
  • Category: Discrete Semiconductor Product
  • Popularity: Medium
  • Operating Temperature Range: -55 to 150 degrees Celsius (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,665 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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