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Same model may have multiple batches, images only for reference.
SIHF7N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHF7N60E-E3

Part No SIHF7N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-220
Datasheet
SIHF7N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 680pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096426-SIHF7N60E-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHF7N60E-E3 CAD Model

Description

The Vishay SIHF7N60E-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 7A @ 25°C.

  • Maximum Rds On: 600 mOhm @ 3.5A and 10V gate-source voltage
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 40nC @ 10V
  • Input Capacitance: 680pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Power Dissipation: 31W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: TO-220 Full Pack
  • Suitable for: power supplies and motor drives

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7795 $62.2825
80+ $1.4602 $116.8160
125+ $1.4146 $176.8250
170+ $1.3689 $232.7130
220+ $1.3233 $291.1260
295+ $1.1864 $349.9880
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Availability: 20,000 pieces
MOQ: 35 pcs
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