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SIHF9630S-GE3

Part No SIHF9630S-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 3W (Ta), 74W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHF9630
Other Names 742-SIHF9630S-GE3TR
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277904-SIHF9630S-GE3
Ultra Librarian 3D Model Ultra Librarian SIHF9630S-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a P-channel component that operates at a maximum temperature of 150 degrees Celsius.

  • Drain-to-source voltage rating: 200 V
  • Continuous drain current: 6.5A (Tc) @ 25°C
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Products
  • ECCN: EAR99
  • Package Quantity: 1000 units
  • MSL level: 1 (unlimited)
  • HTSUS code: 8541.29.0095

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