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Same model may have multiple batches, images only for reference.
SIHFB20N50K-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHFB20N50K-E3

Part No SIHFB20N50K-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2870 pF @ 25 V
Power Dissipation (Max) 280W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHFB20
Standard Package 1,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667128-SIHFB20N50K-E3
Ultra Librarian 3D Model Ultra Librarian SIHFB20N50K-E3 CAD Model

Description

The SIHFB20N50K-E3 is a N-Channel MOSFET transistor from Vishay. Bold the product name (e.g., BAV99S,135 → SIHFB20N50K-E3) and manufacturer (e.g., Nexperia USA Inc. → Vishay).

  • Channel Type: N-Channel
  • Vdss: 500V
  • Id @ 25°C: 20A
  • Rds On @ 10V, 12A: 250mOhm
  • Power Dissipation: 280W
  • Mounting Type: Through-hole
  • Package: TO-220-3
  • Qg @ 10V: 110nC
  • Ciss @ 25V: 2870pF
  • Temperature Range: -55°C to 150°C
  • Status: Active

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Quantity Unit Price Ext. Price
11+ $5.4678 $60.1458
26+ $4.4865 $116.6490
40+ $4.3463 $173.8520
55+ $4.2060 $231.3300
72+ $4.0658 $292.7376
96+ $3.6452 $349.9392
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Availability: 7,600 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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