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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFR024-GE3DKR,742-SIHFR024-GE3TR,742-SIHFR024-GE3CT
Standard Package 3,000
Win Source Part Number 965570-SIHFR024-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR024-GE3 CAD Model

Description

This MOSFET transistor is N-Channel and has a drain to source voltage (Vdss) of 60 V.

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 60 V
  • Manufacturer: Vishay Siliconix
  • Gate Charge (Qg): 25 nC @ 10 V
  • Maximum Power Dissipation: 2.5 W (Ta) and 42 W (Tc)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Input Capacitance (Ciss): 640 pF @ 25 V
  • Gate-Source Threshold Voltage (Vgs(th)): 4 V @ 250 μA
  • Maximum Vgs: ±20V
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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