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Same model may have multiple batches, images only for reference.
SIHFR9220-GE3 Vishay
Same model may have multiple batches, images only for reference.

SIHFR9220-GE3

Part No SIHFR9220-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHANNEL 200V  /  P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
Datasheet
SIHFR9220-GE3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFR9220-GE3DKR,742-SIHFR9220-GE3CT,742-SIHFR9220-GE3TR
Standard Package 3,000
Win Source Part Number 1225037-SIHFR9220-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR9220-GE3 CAD Model

Description

The SIHFR9220-GE3 is a P-Channel MOSFET transistor designed for use in Discrete Semiconductor Products.

  • Drain to Source Voltage (Vdss): 200 V
  • Continuous Drain Current (Id): 3.6A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Power Dissipation: 2.5W (Ta), 42W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Mounting Type: SMD (SMT)
  • Operating Temperature: -55°C ~ 150°C (TJ)

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