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Same model may have multiple batches, images only for reference.
SIHFR9310-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFR9310-GE3

Part No SIHFR9310-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 400V 1.8A DPAK
Datasheet
SIHFR9310-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR9310
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 810850-SIHFR9310-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR9310-GE3 CAD Model

Description

The SIHFR9310-GE3 is a P-channel MOSFET transistor from Vishay.

  • Transistor Type: MOSFET (P-Channel)
  • Drain to Source Voltage (Vdss): 400V
  • Continuous Drain Current (Id) @ 25°C: 1.8A
  • Maximum On-Resistance (Rds On): 7Ohm @ 1.1A, 10V
  • Package: TO-252-3, DPak
  • Gate Charge (Qg) @ 10V: 13nC
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5417 $51.4615
225+ $0.4445 $100.0125
350+ $0.4306 $150.7100
480+ $0.4167 $200.0160
625+ $0.4028 $251.7500
835+ $0.3611 $301.5185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 190 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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