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Same model may have multiple batches, images only for reference.
SIHFR9310TR-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHFR9310TR-GE3

Part No SIHFR9310TR-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHFR9310TR-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number SIHFR9310
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277902-SIHFR9310TR-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR9310TR-GE3 CAD Model

Description

The SIHFR9310TR-GE3 is a P-channel MOSFET transistor that is a part of the discrete semiconductor products category.

  • Fast Recovery Speed: Less than 500ns
  • Maximum Voltage: 400V
  • Continuous Drain Current @ 25°C: 1.8A
  • Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1277902-SIHFR9310TR-GE3

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