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Same model may have multiple batches, images only for reference.
SIHG039N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG039N60E-GE3

Part No SIHG039N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 63A TO247AC  /  N-Channel 600 V 63A (Tc) 357W (Tc) Through Hole TO-247AC
Datasheet
SIHG039N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4369 pF @ 100 V
Power Dissipation (Max) 357W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG039
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1178420-SIHG039N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG039N60E-GE3 CAD Model

Description

The Vishay SIHG039N60E-GE3 is an N-Channel MOSFET designed for high power applications.

  • Channel Type: N-Channel
  • Drain-Source Voltage: 600V
  • Continuous Drain Current (25°C): 63A
  • Rds On: 39mOhm @ 32A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge: 126 nC @ 10V
  • Input Capacitance: 4369 pF @ 100V
  • Package: TO-247-3
  • Mounting: Through-Hole
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.6523 $60.5661
17+ $7.0993 $120.6881
26+ $6.8775 $178.8150
35+ $6.6556 $232.9460
45+ $6.4338 $289.5210
61+ $5.7682 $351.8602
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Availability: 500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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