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Same model may have multiple batches, images only for reference.
SIHG039N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG039N60EF-GE3

Part No SIHG039N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 61A TO247AC  /  N-Channel 600 V 61A (Tc) 357W (Tc) Through Hole TO-247AC
Datasheet
SIHG039N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EF
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4323 pF @ 100 V
Power Dissipation (Max) 357W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG039
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
Win Source Part Number 1165078-SIHG039N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG039N60EF-GE3 CAD Model

Description

The SIHG039N60EF-GE3 is a high-quality electronic component from Vishay Siliconix.

  • Supply and Demand: Limited
  • Type: MOSFET (Metal Oxide)
  • Drain to Source Voltage: 600 V
  • Power Dissipation: 357W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.4270 $58.9890
17+ $6.9145 $117.5465
26+ $6.6985 $174.1610
36+ $6.4823 $233.3628
47+ $6.2663 $294.5161
62+ $5.6181 $348.3222
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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