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Same model may have multiple batches, images only for reference.
SIHG21N65EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG21N65EF-GE3

Part No SIHG21N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG21N65EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2322 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG21
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277867-SIHG21N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG21N65EF-GE3 CAD Model

Description

The Vishay Siliconix SIHG21N65EF-GE3 is an N-channel MOSFET with a drain to source voltage (Vdss) of 650 V.

  • Current - Continuous Drain (Id): 21A (Tc)
  • Rds On (Max): 180mOhm @ 11A, 10V
  • Power Dissipation (Max): 208W (Tc)
  • Gate Charge (Qg) (Max): 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max): 2322 pF @ 100 V
  • Vgs (Max): ±30V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole

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