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FQU3N60TU

Part No FQU3N60TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067482-FQU3N60TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU3N60TU CAD Model

Description

This MOSFET type electronic component is manufactured by Fairchild/ON Semiconductor and is now obsolete (EOL). It has a through hole mounting and a drain-source breakdown voltage of 600V.

  • Mounting Type: Through Hole
  • Drain-Source Breakdown Voltage: 600V
  • Rds On (Max): 3.6 Ohm @ 1.2A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0115 $60.6900
140+ $0.8301 $116.2140
220+ $0.8041 $176.9020
300+ $0.7782 $233.4600
385+ $0.7523 $289.6355
515+ $0.6744 $347.3160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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