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Same model may have multiple batches, images only for reference.
SIHG33N65EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG33N65EF-GE3

Part No SIHG33N65EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG33N65EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 109mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 171 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4026 pF @ 100 V
Power Dissipation (Max) 313W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG33
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277868-SIHG33N65EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG33N65EF-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is an N-Channel type transistor with a drain-source voltage of 650V.

  • Continuous Drain Current: 31.6A @ 25°C
  • Maximum Rds On: 109mOhm @ 16.5A and 10V
  • Gate Charge: 171nC @ 10V
  • Package/Case: TO-247-3
  • Mounting Type: Through-Hole
  • Operating Temperature: -55°C to 150°C
  • Gate-Source Voltage: ±30V
  • Application: Discrete Semiconductor Product

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8205 $62.5640
18+ $6.4172 $115.5096
28+ $6.2162 $174.0536
39+ $6.0164 $234.6396
50+ $5.8154 $290.7700
67+ $5.2137 $349.3179
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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