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SIHG73N60E-GE3

Part No SIHG73N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 73A TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 362nC @ 10V
Max Input Capacitance 7700pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 520W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 36A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-247-3
Win Source Part Number 211706-SIHG73N60E-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHG73N60E-GE3 CAD Model

Description

The Vishay SIHG73N60E-GE3 is an N-channel MOSFET that has a power dissipation of 520W (Tc).

  • Power Dissipation: 520W (Tc)
  • Mounting Technology: through-hole
  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 73A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 362nC @ 10V
  • Maximum Input Capacitance: 7700pF @ 100V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 39 mOhm @ 36A, 10V
  • Product Status: active
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.0971 $52.3884
10+ $10.7463 $107.4630
15+ $10.4105 $156.1575
20+ $10.0747 $201.4940
26+ $9.7389 $253.2114
35+ $8.7314 $305.5990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,514 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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