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SIHL620S-GE3

Name: SIHL620S-GE3
Brand: Vishay
SKU: 1223972
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SIHL620S-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	LOGIC MOSFET N-CHANNEL 200V / N-Channel 200 V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D²PAK (TO-263)
Datasheet	SIHL620S-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Power Dissipation (Max)	3.1W (Ta), 50W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIHL620S-GE3TR,742-SIHL620S-GE3DKR,742-SIHL620S-GE3CT
Standard Package	1,000
Win Source Part Number	1223972-SIHL620S-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHL620S-GE3 CAD Model

Alternative Products

Description

The SIHL620S-GE3 is an N-channel MOSFET with a drain to source voltage of 200 V from Vishay Siliconix.

Continuous Drain Current: 5.2A @ 25°C
Application: Discrete semiconductor products such as transistors, FETs, and MOSFETs
Maximum Rds On: 800mOhm @ 3.1A and 10V
Gate Charge: 16nC @ 5V
Input Capacitance: 360pF @ 25V
Gate-Source Threshold Voltage: 2V @ 250μA
Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Power Dissipation: 3.1W (Ta), 50W (Tc)
Operating Temperature Range: -55°C ~ 150°C (TJ)

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