The Vishay Siliconix SIHL630STRL-GE3 MOSFET is a high-performance N-channel FET designed for use in discrete semiconductor products, specifically transistors and MOSFETs.

• Drain to Source Voltage (Vdss): 200 V
• Continuous Drain Current (Id): 9A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
• Vgs(th) (Max) @ Id: 2V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
• Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
• Operating Temperature Range: -55°C to 150°C (TJ)
• Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier: Vishay Siliconix