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SI4896DY-T1-GE3

Part No SI4896DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 6.7A 8SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Max Gate Charge 41nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 140341-SI4896DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4896DY-T1-GE3 CAD Model

Description

This MOSFET is manufactured by Vishay and is designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 80V
  • Maximum Rds On at Id, Vgs: 16.5 mOhm @ 10A, 10V
  • Supply and Demand Status: limited
  • Note: For more information, please contact the manufacturer.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.2798 $50.1556
54+ $1.8707 $101.0178
83+ $1.8122 $150.4126
115+ $1.7537 $201.6755
148+ $1.6953 $250.9044
198+ $1.5199 $300.9402
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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