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Same model may have multiple batches, images only for reference.
SIHP14N50D-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP14N50D-GE3

Part No SIHP14N50D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 14A TO220AB  /  N-Channel 500 V 14A (Tc) 208W (Tc) Through Hole TO-220AB
Datasheet
SIHP14N50D-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1144 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP14
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1028565-SIHP14N50D-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP14N50D-GE3 CAD Model

Description

The Vishay Siliconix SIHP14N50D-GE3 is an N-channel MOSFET transistor with a drain to source voltage of 500V and a continuous drain current of 14A (Tc).

  • Maximum On-Resistance: 400mOhm @ 7A and 10V
  • Gate Charge: 58nC @ 10V
  • Input Capacitance: 1144pF @ 100V
  • Threshold Voltage: 5V @ 250µA
  • Package: Through-hole TO-220-3
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3589 $58.9725
60+ $1.9355 $116.1300
93+ $1.8750 $174.3750
128+ $1.8145 $232.2560
165+ $1.7541 $289.4265
221+ $1.5726 $347.5446
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Availability: 70 pieces
In Stock: 50 pieces Factory Stock: 20 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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