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Same model may have multiple batches, images only for reference.
SIHP15N60E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHP15N60E-E3

Part No SIHP15N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO220AB
Datasheet
SIHP15N60E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1350pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 211709-SIHP15N60E-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHP15N60E-E3 CAD Model

Description

The Vishay SIHP15N60E-E3 is a N-Channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 15A at 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 280 mOhm @ 8A, 10V
  • Power Dissipation: 180W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 78nC @ 10V
  • Max Input Capacitance: 1350pF @ 100V
  • Operating Temperature Range (TJ): -55°C to 150°C
  • Package: TO-220AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0014 $50.0700
125+ $0.8217 $102.7125
190+ $0.7960 $151.2400
260+ $0.7704 $200.3040
340+ $0.7447 $253.1980
450+ $0.6676 $300.4200
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