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SIHP240N60E-GE3

Part No SIHP240N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 795 pF @ 100 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP240
Other Names SIHP240N60E-GE3CT,SIHP240N60E-GE3DKR,SIHP240N60E-GE3CT,SIHP240N60E-GE3TR,SIHP240N60E-GE3DKRINACTIVE,SIHP240N60E-GE3TR,SIHP240N60E-GE3TRINACTIVE,SIHP240N60E-GE3DKR
Standard Package 50
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277758-SIHP240N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP240N60E-GE3 CAD Model

Description

The Vishay Siliconix SIHP240N60E-GE3 is a high-quality electronic component that falls under the category of discrete semiconductor products.

  • MOSFET Type: N-channel MOSFET
  • Drain to Source Voltage: 600 V
  • Current - Continuous Drain: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V

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Shipping Information

Shipped from HK warehouse
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