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Same model may have multiple batches, images only for reference.
SIHP24N80AE-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP24N80AE-GE3

Part No SIHP24N80AE-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP24N80AE-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP24
Other Names ,742-SIHP24N80AE-GE3DKR,742-SIHP24N80AE-GE3DKR,742-SIHP24N80AE-GE3TR,742-SIHP24N80AE-GE3CT,742-SIHP24N80AE-GE3,742-SIHP24N80AE-GE3CT,742-SIHP24N80AE-GE3TR
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277726-SIHP24N80AE-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP24N80AE-GE3 CAD Model

Description

The SIHP24N80AE-GE3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 21A
  • Maximum On-Resistance: 184mOhm @ 10A, 10V gate-source voltage
  • Operating Temperature Range: -55°C to 150°C
  • Input Capacitance: 1836pF @ 100V
  • Gate Charge: 89nC @ 10V

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