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Same model may have multiple batches, images only for reference.
SIHP33N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP33N60EF-GE3

Part No SIHP33N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHP33N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3454 pF @ 100 V
Power Dissipation (Max) 278W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP33
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277881-SIHP33N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP33N60EF-GE3 CAD Model

Description

The SIHP33N60EF-GE3 is a MOSFET transistor designed for single applications. It is an N-channel FET type electronic component from Vishay Siliconix.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 33A @ 25°C
  • Maximum Rds on at Id and Vgs: 98mOhm @ 16.5A and 10V, respectively
  • Maximum Vgs(th) at Id: 4V @ 250μA
  • Power Dissipation: 278W @ Tc
  • Gate Charge: 155 nC @ 10V
  • Input Capacitance (Ciss): 3454 pF @ 100V
  • Maximum Vgs: ±30V
  • Operating Temperature Range: Between -55°C and 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.7939 $57.9390
25+ $4.7540 $118.8500
38+ $4.6054 $175.0052
52+ $4.4568 $231.7536
68+ $4.3083 $292.9644
90+ $3.8626 $347.6340
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Availability: 5,770 pieces
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