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Same model may have multiple batches, images only for reference.
SIHU7N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHU7N60E-GE3

Part No SIHU7N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7A TO-251
Datasheet
SIHU7N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 680pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1096443-SIHU7N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHU7N60E-GE3 CAD Model

Description

The Vishay 1096443-SIHU7N60E-GE3 is an N-channel MOSFET with a maximum power dissipation of 78W (Tc) and a continuous drain current of 7A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 600 mOhm @ 3.5A, 10V
  • Mounting Type: through-hole
  • Packaging: bulk
  • Maximum Input Capacitance: 680pF @ 100V
  • Max Gate Charge: 40nC @ 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Usage: popularly used in discrete semiconductor products
  • Supply and Demand Status: currently in balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3564 $61.0380
105+ $1.1131 $116.8755
165+ $1.0782 $177.9030
225+ $1.0434 $234.7650
290+ $1.0087 $292.5230
385+ $0.9044 $348.1940
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Availability: 20,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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