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IPI057N08N3 G

Part No IPI057N08N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 80A TO262-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 90μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 4750pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045914-IPI057N08N3 G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI057N08N3 G CAD Model

Description

The IPI057N08N3 G is an N-channel MOSFET manufactured by Infineon Technologies.

  • Package: PG-TO262-3
  • Mounting Type: through-hole
  • Maximum Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Rds On at Id,Vgs: 5.7 mOhm @ 80A, 10V
  • Product Line: Infineon Technologies
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4259 $58.2216
59+ $1.9905 $117.4395
90+ $1.9283 $173.5470
124+ $1.8662 $231.4088
161+ $1.8039 $290.4279
215+ $1.6172 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,500 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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