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Same model may have multiple batches, images only for reference.
SIHW70N60EF-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHW70N60EF-GE3

Part No SIHW70N60EF-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 70A TO247AD  /  N-Channel 600 V 70A (Tc) 520W (Tc) Through Hole TO-247AD
Datasheet
SIHW70N60EF-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 100 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
Base Product Number SIHW70
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 480
Win Source Part Number 1093070-SIHW70N60EF-GE3
Ultra Librarian 3D Model Ultra Librarian SIHW70N60EF-GE3 CAD Model

Description

The SIHW70N60EF-GE3 is a MOSFET transistor manufactured by Vishay Siliconix.

  • FET Type: N-channel FET
  • Maximum Drain to Source Voltage: 600V
  • Continuous Drain Current: 70A @ 25°C
  • Rds On: 38mOhm @ 35A and 10V
  • Package: TO-247-3
  • Maximum Power Dissipation: 520W @ Tc
  • Alternative Cross-Reference: SIHG70N60EF-GE3, SIHG73N60E-GE3, STWA88N65M5, FCH041N60F, FCH043N60, and FCH041N60F-F085

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.2800 $66.4000
11+ $10.8964 $119.8604
17+ $10.5559 $179.4503
23+ $10.2154 $234.9542
30+ $9.8749 $296.2470
40+ $8.8533 $354.1320
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Availability: 4,980 pieces
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