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SIJ420DP-T1-GE3

Part No SIJ420DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3630pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064642-SIJ420DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIJ420DP-T1-GE3 CAD Model

Description

The Vishay SIJ420DP-T1-GE3 is an N-channel MOSFET designed for power management applications manufactured by Vishay.

  • Package: PowerPAK SO-8 package
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C Tc): 50A
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 90nC @ 10V
  • Max Rds On (Id,Vgs): 2.6 mOhm @ 15A, 10V
  • Popularity: medium
  • Supply and demand status: balanced

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