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Same model may have multiple batches, images only for reference.
SIJ438ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJ438ADP-T1-GE3

Part No SIJ438ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIJ438ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 45.3A (Ta), 169A(Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 20 V
Power Dissipation (Max) 5W (Ta), 69.4W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJ438
Other Names SIJ438ADP-T1-GE3DKR,SIJ438ADP-T1-GE3TR,SIJ438ADP-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277631-SIJ438ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ438ADP-T1-GE3 CAD Model

Description

The Vishay Siliconix SIJ438ADP-T1-GE3 is a high-performance MOSFET that is designed to provide a drain to source voltage of 40 V with a continuous drain current of 45.3A @ 25°C.

  • Rds On: 1.35mOhm @ 20A and 10V
  • Gate Charge: 162 nC @ 10 V
  • Package: PowerPAK SO-8
  • Packaging: Tape and reel
  • Win Source Part Number: 1277631-SIJ438ADP-T1-GE3

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