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Same model may have multiple batches, images only for reference.
SIJ458DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJ458DP-T1-GE3

Part No SIJ458DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A PPAK SO-8
Datasheet
SIJ458DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 122nC @ 10V
Max Input Capacitance 4810pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 69.4W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064643-SIJ458DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIJ458DP-T1-GE3 CAD Model

Description

This MOSFET technology electronic component is manufactured by Vishay and has a medium popularity in the market.

  • Mounting Type: SMD (SMT)
  • Case/Package: PowerPAK SO-8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Max Rds On (Id,Vgs): 2.2 mOhm @ 20A, 10V

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Quantity Unit Price Ext. Price
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112+ $2.5850 $289.5200
150+ $2.3176 $347.6400
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Availability: 1,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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