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SIJA58ADP-T1-GE3

Part No SIJA58ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3030 pF @ 20 V
Power Dissipation (Max) 5W (Ta), 56.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJA58
Other Names SIJA58ADP-T1-GE3DKR,SIJA58ADP-T1-GE3CT,SIJA58ADP-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277633-SIJA58ADP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJA58ADP-T1-GE3 CAD Model

Description

The SIJA58ADP-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 32.3A (Ta) and 109A (Tc)
  • Maximum On-Resistance: 2.65mOhm @ 15A and 10V
  • Gate Charge: 61nC @ 10V
  • Input Capacitance: 3030pF @ 20V
  • Package/Case Type: PowerPAK® SO-8
  • Supplier Device Package: PowerPAK® SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9314 $51.2270
135+ $0.7642 $103.1670
205+ $0.7403 $151.7615
280+ $0.7165 $200.6200
365+ $0.6926 $252.7990
485+ $0.6209 $301.1365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,483 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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