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SIJA58DP-T1-GE3

Part No SIJA58DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 20 V
Power Dissipation (Max) 27.7W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJA58
Other Names SIJA58DP-T1-GE3TR,SIJA58DP-T1-GE3DKR,SIJA58DP-T1-GE3CT,SIJA58DP-T1-GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277634-SIJA58DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJA58DP-T1-GE3 CAD Model

Description

The SIJA58DP-T1-GE3 is a N-Channel MOSFET transistor from Vishay Siliconix.

  • Package: Tape & Reel
  • Series: TrenchFET® Gen IV
  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (Id): 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Power Dissipation (Max): 27.7W (Tc)
  • Package: PowerPAK® SO-8
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • Temperature Range: -55°C ~ 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5658 $50.9220
220+ $0.4643 $102.1460
335+ $0.4498 $150.6830
460+ $0.4353 $200.2380
595+ $0.4208 $250.3760
800+ $0.3772 $301.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,600 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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