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SIR104ADP-T1-RE3

Part No SIR104ADP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.8A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 50 V
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR104
Other Names 742-SIR104ADP-T1-RE3TR,742-SIR104ADP-T1-RE3DKR,742-SIR104ADP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277637-SIR104ADP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR104ADP-T1-RE3 CAD Model

Description

The SIR104ADP-T1-RE3 MOSFET is a N-channel FET that features a drain to source voltage of 100 V, continuous drain current of 18.8A @ 25°C (Ta) and 81A @ 25°C (Tc), and a maximum Rds On of 6.1mOhm @ 15A and 10V.

  • Gate Charge: 70 nC @ 10 V
  • Input Capacitance: 3250 pF @ 50 Vds
  • Package: PowerPAK SO-8
  • Maximum Power Dissipation: 5.4W (Ta) and 100W (Tc)
  • Series: TrenchFET Gen IV
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4180 $56.7200
90+ $1.1635 $104.7150
135+ $1.1272 $152.1720
185+ $1.0908 $201.7980
240+ $1.0544 $253.0560
320+ $0.9454 $302.5280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,370 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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