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SIR104DP-T1-RE3

Part No SIR104DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 50 V
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR104
Other Names SIR104DP-T1-RE3CT,SIR104DP-T1-RE3DKR,SIR104DP-RE3,SIR104DP-T1-RE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277638-SIR104DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR104DP-T1-RE3 CAD Model

Description

The SIR104DP-T1-RE3 is a N-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 79A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250μA
  • Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
  • Package: PowerPAK® SO-8
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 50 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,610 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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