The SIR106ADP-T1-RE3 is a MOSFET transistor that belongs to the TrenchFET® Gen IV series.

• Type: N-Channel FET
• Drain to Source Voltage: 100 V
• Maximum Continuous Drain Current: 16.1A (Ta), 65.8 (Tc)
• Maximum On-Resistance: 8mOhm @ 15A, 10V
• Gate Threshold Voltage: 4V @ 250µA
• Maximum Power Dissipation: 5W (Ta), 83.3W (Tc)
• Mounting: Tape and reel
• Package: PowerPAK® SO-8
• Supplier Device Package: PowerPAK® SO-8
• Gate Charge: 52 nC @ 10 V
• Input Capacitance: 2440 pF @ 50 V
• Maximum Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to 150°C (TJ)
• Manufacturer: Vishay Siliconix