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Same model may have multiple batches, images only for reference.
SIR106DP-T1-RE3 Real Image
Same model may have multiple batches, images only for reference.

SIR106DP-T1-RE3

Part No SIR106DP-T1-RE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIR106DP-T1-RE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3610 pF @ 50 V
Power Dissipation (Max) 3.2W (Ta), 83.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR106
Other Names SIR106DP-T1-RE3DKR,SIR106DP-T1-RE3TR,SIR106DP-T1-RE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277640-SIR106DP-T1-RE3
Ultra Librarian 3D Model Ultra Librarian SIR106DP-T1-RE3 CAD Model

Description

The Vishay Siliconix SIR106DP-T1-RE3 is a high-quality N-Channel MOSFET that is perfect for various applications.

  • Series: TrenchFET Gen IV
  • Power Dissipation: 3.2W (Ta), 83.3W (Tc)
  • Win Source Part Number: 1277640-SIR106DP-T1-RE3
  • Standard Package: 3,000
  • Package: PowerPAK SO-8
  • Supplier Device Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5428 $53.9980
80+ $1.2659 $101.2720
125+ $1.2264 $153.3000
170+ $1.1868 $201.7560
220+ $1.1472 $252.3840
295+ $1.0286 $303.4370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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